{
  "$type": "site.standard.document",
  "description": "A switch circuit and an electronic device are provided. The switch circuit includes an external node, an internal node, an enhancement-mode gallium-nitride high-electron-mobility transistor, and a driver module. The enhancement-mode gallium-nitride high-electron-mobility transistor includes a first…",
  "path": "/patents/1369394",
  "publishedAt": "2024-09-19T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "H03K17/063",
    "Honor Device Co., Ltd."
  ],
  "textContent": "A switch circuit and an electronic device are provided. The switch circuit includes an external node, an internal node, an enhancement-mode gallium-nitride high-electron-mobility transistor, and a driver module. The enhancement-mode gallium-nitride high-electron-mobility transistor includes a first gate electrode, a first electrode, and a second electrode. The driver module includes a control terminal. The first gate electrode is coupled to the control terminal, the first electrode is coupled to the external node, and the internal node is coupled to the second electrode. The external node receives a charging voltage, and the driver module controls on or off of the enhancement-mode gallium-nitride high-electron-mobility transistor. When the enhancement-mode gallium-nitride high-electron-mobility transistor is turned on, the charging voltage is transmitted to the internal node. Alternatively, the internal node receives a charging voltage, and the driver module controls on or off of the enhancement-mode gallium-nitride high-electron-mobility transistor.",
  "title": "SWITCH CIRCUIT AND ELECTRONIC DEVICE"
}