{
  "$type": "site.standard.document",
  "description": "The semiconductor inertial sensor (30) is formed by a rotor element (38) and a stator element (39) electrostatically coupled together. The rotor element (38) is formed by a suspended mass (40) and by a plurality of mobile electrodes (41) extending from the suspended mass (40). The stator element…",
  "path": "/patents/1070158",
  "publishedAt": "2006-02-08T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "G01C19/5755",
    "ST MICROELECTRONICS SRL [IT]"
  ],
  "textContent": "The semiconductor inertial sensor (30) is formed by a rotor element (38) and a stator element (39) electrostatically coupled together. The rotor element (38) is formed by a suspended mass (40) and by a plurality of mobile electrodes (41) extending from the suspended mass (40). The stator element (39) is formed by a plurality of fixed electrodes (42) facing respective mobile electrodes (41). The suspended mass (40) is supported by elastic suspension elements (45). The suspended mass (40) has a first, larger, thickness (t1 + t2), and the elastic suspension elements (45) have a second thickness (t1), smaller than the first thickness.",
  "title": "Mems-type high-sensitivity inertial sensor and manufacturing process thereof"
}