{
  "$type": "site.standard.document",
  "description": "The present invention relates to a circuit (20) for dynamic control of a power transistor in applications for high voltage and of the type wherein a power transistor (TR1) has a conduction terminal (C) connected to a load and a control terminal (G1) receiving a driving signal from a driver block…",
  "path": "/patents/1075530",
  "publishedAt": "2005-07-27T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "F02P3/0435",
    "ST MICROELECTRONICS SRL [IT]"
  ],
  "textContent": "The present invention relates to a circuit (20) for dynamic control of a power transistor in applications for high voltage and of the type wherein a power transistor (TR1) has a conduction terminal (C) connected to a load and a control terminal (G1) receiving a driving signal from a driver block (4) activated by a trigger signal (Vin) received on a circuit input terminal (IN1). Advantageously, the circuit (20) comprises a JFET component (TR2) inserted between the conduction (C) and control (G1) terminal of the power transistor (TR1) and equal to a resistance with non-linear feature. Moreover, the JFET component (TR2) is monolithically integrated in the structure of said power transistor (TR1).",
  "title": "Circuit for dynamic control of a power transistor in applications for high voltage"
}