{
  "$type": "site.standard.document",
  "description": "A silicon composite comprises silicon particles whose surface is at least partially coated with a silicon carbide layer. It is prepared by subjecting a silicon powder to thermal CVD with an organic hydrocarbon gas and/or vapor at 900-1,400° C., and heating the powder for removing an excess free…",
  "path": "/patents/1143374",
  "publishedAt": "2015-06-18T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "H01M4/366",
    "Shin-Etsu Chemical Co., Ltd."
  ],
  "textContent": "A silicon composite comprises silicon particles whose surface is at least partially coated with a silicon carbide layer. It is prepared by subjecting a silicon powder to thermal CVD with an organic hydrocarbon gas and/or vapor at 900-1,400° C., and heating the powder for removing an excess free carbon layer from the surface through oxidative decomposition.",
  "title": "SILICON COMPOSITE, MAKING METHOD, AND NON-AQUEOUS ELECTROLYTE SECONDARY CELL NEGATIVE ELECTRODE MATERIAL"
}