{
  "$type": "site.standard.document",
  "description": "A ZnSe based light emitting device enabling longer lifetime is provided. The light emitting device is formed on a compound semiconductor, includes an active layer (4) positioned between an n-type ZnMgSSe cladding layer (3) and a p-type ZnMgSSe cladding layer (5), and has a barrier layer (11) having…",
  "path": "/patents/1079111",
  "publishedAt": "2005-03-23T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "B60Q1/24",
    "SUMITOMO ELECTRIC INDUSTRIES [JP]"
  ],
  "textContent": "A ZnSe based light emitting device enabling longer lifetime is provided. The light emitting device is formed on a compound semiconductor, includes an active layer (4) positioned between an n-type ZnMgSSe cladding layer (3) and a p-type ZnMgSSe cladding layer (5), and has a barrier layer (11) having a band gap larger than that of the p-type ZnMgSSe cladding layer, provided between the active layer (4) and the p-type ZnMgSSe cladding layer (5).",
  "title": "Semiconductor light emitting device"
}