{
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  "coverImage": {
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  "description": "A semiconductor device, including: a semiconductor element that has, formed at a first surface thereof: a pair of metal layers adjacent to each other, and an insulating layer interposed between the pair of metal layers; a metal wiring board that is bonded to the pair of metal layers of the…",
  "path": "/patents/1114925",
  "publishedAt": "2026-05-28T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "H10W40/255",
    "FUJI ELECTRIC CO., LTD."
  ],
  "textContent": "A semiconductor device, including: a semiconductor element that has, formed at a first surface thereof: a pair of metal layers adjacent to each other, and an insulating layer interposed between the pair of metal layers; a metal wiring board that is bonded to the pair of metal layers of the semiconductor element respectively via a pair of bonding materials, the metal wiring board including a pair of regions thereof respectively overlapping with the pair of metal layers in a plan view of the semiconductor device; and a separation portion provided between the semiconductor element and the metal wiring board, and separating the pair of regions of the metal wiring board.",
  "title": "SEMICONDUCTOR DEVICE AND VEHICLE"
}