{
  "$type": "site.standard.document",
  "description": "A single chamber fuel cell (10) comprised of a cell arranged in a mixed fuel gas comprised of hydrogen or another fuel gas and oxygen, wherein the cell used is a pn junction type semiconductor having electrodes (12) of a p-type semiconductor with carriers of holes and an n-type semiconductor (14)…",
  "path": "/patents/1086359",
  "publishedAt": "2004-06-16T00:00:00.000Z",
  "site": "at://did:plc:oql6ds5vnff4ugar6rruliwd/site.standard.publication/3mn3ohu7oxx5w",
  "tags": [
    "H01M4/8605",
    "SHINKO ELECTRIC IND CO [JP]"
  ],
  "textContent": "A single chamber fuel cell (10) comprised of a cell arranged in a mixed fuel gas comprised of hydrogen or another fuel gas and oxygen, wherein the cell used is a pn junction type semiconductor having electrodes (12) of a p-type semiconductor with carriers of holes and an n-type semiconductor (14) with carriers of electrons connected to ends of electrical takeout wires (12a, 14a), and each of the p-type semiconductor (12) and n-type semiconductor (14) is formed porous to an extent enabling the mixed fuel gas to pass through. A mixed pn layer (16) is located between the electrodes (12, 14) to increase the reaction interface.",
  "title": "Fuel cell based on p-type and n-type semiconductors"
}