SILICON DEVICE

A silicon device including an insulating substrate having a recess formed on the surface thereof, and a beam-like structure made of silicon formed on the front surface of the insulating substrate to surround the recess. The beam-like structure includes at least one functional section having a supporting section bonded onto the insulating substrate and at least one cantilever formed integrally with the supporting section while extending across the recess. The silicon device also includes a frame made of silicon that surrounds the beam-like structure with a space kept therefrom and is formed onto the insulating substrate. The silicon device also includes a conductive film having electrical continuity with the frame and formed on the surface of the insulating substrate at least in a portion right below the cantilever. The conductive film prevents the insulating substrate from being charged thereby significantly suppressing the damage caused on the beam-like structure during dry etching.