Integrated gyroscope of semiconductor material with at least one sensitive axis in the sensor plane

An integrated gyroscope (1), including an acceleration sensor (23) formed by: a driving assembly (16); a sensitive mass (6) extending in at least one first and second directions (X, Y) and being moved by the driving assembly (16) in the first direction (X); and by a capacitive sensing electrode (20), facing the sensitive mass. The acceleration sensor (23) has an rotation axis (A) parallel to the second direction (Y), and the sensitive mass (6) is sensitive to forces acting in a third direction (Z) perpendicular to the other directions. The capacitive sensing electrode (20) is formed by a conductive material region extending underneath the sensitive mass (6) and spaced therefrom by an air gap.