{
  "$type": "site.standard.document",
  "bskyPostRef": {
    "cid": "bafyreiagvw4r5qed5v7g6vdemtc5ore2vmwafctbukfkmf65lmixp33bhy",
    "uri": "at://did:plc:mxzzpugn7bprjjrszwkbez3u/app.bsky.feed.post/3mek3jt25rmu2"
  },
  "coverImage": {
    "$type": "blob",
    "ref": {
      "$link": "bafkreiaerc5sr2zea7dwnilr5jfp7cb73kwwhuekohnvhzxhbk3yror23e"
    },
    "mimeType": "image/jpeg",
    "size": 573623
  },
  "path": "/news/2026-02-redefining-gan-power-devices-evs.html",
  "publishedAt": "2026-02-10T16:20:03.000Z",
  "site": "https://techxplore.com",
  "tags": [
    "Electronics & Semiconductors"
  ],
  "textContent": "Researchers at the Indian Institute of Science (IISc) have uncovered fundamental insights into designing gallium nitride (GaN) power transistors, making them safer and easier to utilize in high-value electronics such as electric vehicles and data centers. The work is published in the journal IEEE Transactions on Electron Devices.",
  "title": "Redefining GaN power devices for adoption in EVs and data centers"
}