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  "path": "/nanotechnology-news3/newsid=69362.php",
  "publishedAt": "2026-05-08T19:36:32.000Z",
  "site": "https://www.nanowerk.com",
  "textContent": "Precisely placed defects from a helium ion beam enable ferroelectric switching in aluminum nitride with 40% less energy, using existing chip manufacturing tools.",
  "title": "Ion beam technique unlocks low power ferroelectric memory in aluminum nitride"
}