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  "path": "/nanotechnology-news3/newsid=69309.php",
  "publishedAt": "2026-05-01T20:08:39.000Z",
  "site": "https://www.nanowerk.com",
  "textContent": "A new moire quantum well built from twisted boron nitride layers emits deep-ultraviolet light 20 times more efficiently than aluminum gallium nitride semiconductors.",
  "title": "Twisted boron nitride boosts deep-UV light emission for LEDs"
}