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  "path": "/nanotechnology-news3/newsid=68977.php",
  "publishedAt": "2026-03-24T14:04:24.000Z",
  "site": "https://www.nanowerk.com",
  "textContent": "A new unified model explains how thickness, defects, interface quality, and roughness together control the behavior of ultrathin oxide transistors. The work provides practical design rules for building low-leakage, normally-off devices suitable for future 3D chip stacking.",
  "title": "New design guidelines for atom-thin oxide transistors enable reliable 3D chip integration"
}