{
  "$type": "site.standard.document",
  "bskyPostRef": {
    "cid": "bafyreiecsys5cc2fpkzs273vc5yzphriaooqgavdwn7z4n32zddk2dfnbq",
    "uri": "at://did:plc:lna3xh3vagib3abxsatsvfju/app.bsky.feed.post/3mhjfqnxl4ve2"
  },
  "path": "/nanotechnology-news3/newsid=68952.php",
  "publishedAt": "2026-03-20T13:09:42.000Z",
  "site": "https://www.nanowerk.com",
  "textContent": "Researchers developed a dual-modulated vertically stacked transistor that eliminates current leakage at nanoscale channel lengths, advancing low-power 3D chip integration.",
  "title": "Novel dual-gate transistor design enables stable 3D semiconductor stacking"
}