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  "path": "/pc-components/storage/laser-driven-spintronic-memory-device-switches-1-000-times-faster-than-dram-non-volatile-device-switches-in-40-picoseconds-while-generating-almost-no-heat",
  "publishedAt": "2026-05-20T10:20:37.000Z",
  "site": "https://www.tomshardware.com",
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  "textContent": "Researchers at the University of Tokyo demonstrated a non-volatile Mn₃Sn magnetic switching device capable of flipping bits in just 40 picoseconds while generating minimal heat, potentially paving the way for lower-power AI hardware and memory systems.",
  "title": "Laser-driven spintronic memory device switches 1,000 times faster than DRAM —non-volatile device switches in 40 picoseconds while generating almost no heat"
}